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Plasmonic response in metals, defined as the ability to support subwavelength confinement of surface plasmon modes, is typically limited to a narrow frequency range below the metals’ plasma frequency. This places severe limitations on the operational wavelengths of plasmonic materials and devices. However, when the volume of a metal film is massively decreased, highly confined quasi-two-dimensional surface plasmon modes can be supported out to wavelengths well beyond the plasma wavelength. While this has, thus far, been achieved using ultrathin (nm-scale) metals, such films are quite difficult to realize and suffer from even higher losses than bulk plasmonic films. To extend the plasmonic response to the infrared, here we introduce the concept of metaplasmonics, representing a novel plasmonic modality with a host of appealing properties. By fabricating and characterizing a series of metaplasmonic nanoribbons, we demonstrate large confinement, high-quality factors, and large near-field enhancements across a broad wavelength range, extending well beyond the limited bandwidth of traditional plasmonic materials. We demonstrate 35× plasmon wavelength reduction, and numerical simulations suggest that further wavelength reduction, up to a factor of 150, is achievable using our approach. The demonstration of the metaplasmonics paradigm offers a promising path to fill the near- and mid-infrared technological gap for high-quality plasmonic materials and provides a new material system to study the effects of extreme plasmonic confinement for applications in nonlinear and quantum plasmonics. 

We introduce metaplasmonics, a novel plasmonic modality with a host of appealing properties. Using ultrathin perforated nanoribbons we demonstrate large confinement, high quality factors, and large near-field enhancements across a broad range of infrared wavelengths. 

We experimentally demonstrate primordial metamaterials - composite media supporting essentially nonlocal wave propagation, grown with molecular beam epitaxy. Our transmission measurements confirm the theoretically predicted spectral signature of coupling to nonlocal modes. 

Abstract Photonic funnels, microscale conical waveguides that have been recently realized in the mid-IR spectral range with the help of an all-semiconductor designer metal material platform, are promising devices for efficient coupling of light between the nanoscales and macroscales. Previous analyses of photonic funnels have focused on structures with highly conductive claddings. Here, we analyze the performance of funnels with and without cladding, as a function of material properties, operating wavelength, and geometry. We demonstrate that bare (cladding-free) funnels enable orders-of-magnitude higher enhancement of local intensity than their clad counterparts, with virtually no loss of confinement, and relate this phenomenon to anomalous reflection of light at the anisotropic material–air interface. Intensity enhancement of the order of 25, with confinement of light to wavelength/20 scale, is demonstrated. Efficient extraction of light from nanoscale areas is predicted. 

Nickel and aluminum ohmic contacts were formed on p-doped GeC and GeCSn epitaxial films with ∼1%C. When a 40 nm p-GeC contact layer was added to p-Ge, annealed contact resistivity (Rc) dropped by 87% to 9.3 × 10−7 Ω cm2 for Al but increased by 32% to 2.9 × 10−5 Ω cm2 for Ni. On the other hand, thick films of GeCSn, which showed lower active doping, had contact resistivities of 4.4 × 10−6 Ω cm2 for Al and 1.4 × 10−5 Ω cm2 for Ni. In general, Al contacts were better than Ni, regardless of anneal, and were further improved by adding carbon. Annealing reduced Rc for both Ni and Al contacts to GeCSn by 4×, 2× for Al on GeC, and 5 orders of magnitude for Ni on GeC. It is speculated that C forms bonds with Ni that inhibit diffusion of Ni into the Ge, thus preventing the formation of low-resistance nickel germanide. Adding C, either as bulk GeCSn or as GeC contact layers, seems to significantly reduce the contact resistivity for Al contacts when compared to bulk Ge of comparable doping.